Grade | 3N, 3N5, 4N, with Ta 99.99% min |
Recrystallization | 95% min |
Grain size | ASTM 4 or finer |
Surface finish | 16Rms max. or Ra 0.4 ( RMS64 or better) |
Flatness | 0.1mm or 0.15% max |
Tolerance | +/-0.010" on all dimensions |
Tantalum Sputtering Target is welded with copper back target, and then semiconductor or optical sputtering is carried out to deposit tantalum atoms on the substrate material to realize sputtering coating. Tantalum targets are mainly used in semiconductor coating, optical coating and other industries. In the semiconductor industry, metal (Ta) is currently used to form a barrier layer by physical vapor deposition (PVD).
High Purity: With a purity level exceeding 99.97%, Changsheng Titanium’s tantalum sputtering targets ensure minimal contamination, leading to the production of high-quality, reliable products.
Maximum Density: These tantalum sputtering targets boast a maximum density of over 98%. This high density ensures efficient sputtering, which is crucial for enhancing the quality of the thin film deposition.
Homogeneous Microstructure and Chemical Composition: The tantalum sputtering targets from Changsheng Titanium exhibit a homogeneous microstructure and chemical composition. This uniformity ensures consistent sputtering rates, leading to uniform thin film deposition, which is vital for the performance of the end product.
In addition to the tantalum sputtering target, we can also provide tantalum-silicon alloy, tantalum-aluminum alloy, tantalum-tungsten alloy, nickel-tantalum alloy, cobalt-zirconium-tantalum alloy, tantalum nitride, tantalum carbide, tantalum boride, tantalum pentoxide, and other sputtering targets.